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Optical excitations of Si by time-dependent density-functional theory based on the exact-exchange Kohn-Sham band structure

机译:si的光学激发受时间密度泛函理论的影响   基于精确交换的Kohn-sham带结构

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摘要

We calculate the imaginary part of the frequency-dependent dielectricfunction of bulk silicon by applying time-dependent density-functional theorybased on the exact-exchange (EXX) Kohn-Sham (KS) band structure and theadiabatic local-density approximation (ALDA) kernel. The position of the E2absorption peak calculated with the EXX band structure at theindependent-particle level is in excellent agreement with experiments, whichdemonstrates the good quality of EXX `KS quasiparticles'. The excitonic E1 peakthat is missing at the independent-particle level remains absent iftwo-particle interaction effects are taken into account within thetime-dependent LDA, demonstrating the incapability of the ALDA kernel todescribe excitonic effects.
机译:我们通过应用基于精确交换(EXX)Kohn-Sham(KS)能带结构和绝热局部密度近似(ALDA)核的时变密度泛函理论,计算体硅频率相关介电函数的虚部。用EXX能带结构计算出的E2吸收峰在独立粒子水平上的位置与实验吻合得很好,证明了EXX'KS准粒子'的良好质量。如果在随时间变化的LDA中考虑了两个粒子的相互作用,则在独立粒子水平上缺少的激子E1峰仍然不存在,这表明ALDA内核无法描述激子效应。

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